Infineon IPT Type N-Channel MOSFET, 199 A, 80 V HSOF IPT012N08NF2SATMA1

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R 86,36

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R 99,31

(inc. VAT)

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1 - 9R 86.36
10 - 99R 84.20
100 - 249R 81.67
250 - 499R 78.40
500 +R 75.26

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Packaging Options:
RS stock no.:
259-2643
Mfr. Part No.:
IPT012N08NF2SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

199A

Maximum Drain Source Voltage Vds

80V

Package Type

HSOF

Series

IPT

Mount Type

Surface

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon StrongIRFET 2 power MOSFETs are optimized for a broad range of applications like SMPS, motor drive, battery powered, battery management, UPS, and light electric vehicles. This new technology offers up to 40 percent RDS(on) improvement and up to 60 percent lower Qg compared to the previous StrongIRFET devices, translating into higher power efficiency for improved overall system performance. Increased current ratings allow for higher current carrying capability, eliminating the need to parallel multiple devices translating to lower BOM costs and board savings.

Broad availability from distribution partners

Excellent price/performance ratio

Ideal for high and low switching frequencies

Industry standard footprint through-hole package

High current rating

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