Infineon BSC Dual N-Channel MOSFET, 17 A, 30 V N, 8-Pin PG-TISON-8 BSC0921NDIATMA1
- RS stock no.:
- 259-1477
- Mfr. Part No.:
- BSC0921NDIATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 148,23
(exc. VAT)
R 170,465
(inc. VAT)
Add 55 units to get free delivery
In Stock
- Plus 4,995 unit(s) shipping from 23 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 29.646 | R 148.23 |
| 50 - 495 | R 28.904 | R 144.52 |
| 500 - 995 | R 28.036 | R 140.18 |
| 1000 - 2495 | R 26.914 | R 134.57 |
| 2500 + | R 25.838 | R 129.19 |
*price indicative
- RS stock no.:
- 259-1477
- Mfr. Part No.:
- BSC0921NDIATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Dual N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PG-TISON-8 | |
| Series | BSC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7mΩ | |
| Channel Mode | N | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Dual N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PG-TISON-8 | ||
Series BSC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7mΩ | ||
Channel Mode N | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon optimos 25V the best choice for the demanding requirements of voltage regulator solutions in servers, Datacom and telecom applications. Available in half bridge configuration (power stage 5x6). Improved EMI behaviour making external snubber networks obsolete.
Ultra low gate and output charge
Lowest on-state resistance in small footprint packages
Easy to design
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