Infineon SPD15P10P Type P-Channel MOSFET, 15 A, 100 V Enhancement, 3-Pin TO-252 SPD15P10PLGBTMA1
- RS stock no.:
- 258-7790
- Mfr. Part No.:
- SPD15P10PLGBTMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 5 units)*
R 202,66
(exc. VAT)
R 233,06
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,380 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 40.532 | R 202.66 |
| 50 - 95 | R 39.518 | R 197.59 |
| 100 - 245 | R 38.332 | R 191.66 |
| 250 - 995 | R 36.798 | R 183.99 |
| 1000 + | R 35.326 | R 176.63 |
*price indicative
- RS stock no.:
- 258-7790
- Mfr. Part No.:
- SPD15P10PLGBTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | SPD15P10P | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.20Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -0.96V | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Maximum Power Dissipation Pd | 230W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC Q101, Pb-free lead plating, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series SPD15P10P | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.20Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -0.96V | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Maximum Power Dissipation Pd 230W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC Q101, Pb-free lead plating, RoHS | ||
Automotive Standard No | ||
The Infineon SIPMOS power transistor belongs to highly innovative OptiMOS family P channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics.
Enhancement mode
Avalanche rated
Pb free lead plating
RoHS compliant
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