Infineon SPD15P10P Type P-Channel MOSFET, 15 A, 100 V Enhancement, 3-Pin TSDSON SPD15P10PGBTMA1
- RS stock no.:
- 258-7787
- Mfr. Part No.:
- SPD15P10PGBTMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 177,87
(exc. VAT)
R 204,55
(inc. VAT)
Add 45 units to get free delivery
Limited stock
- 2,490 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 35.574 | R 177.87 |
| 50 - 95 | R 34.684 | R 173.42 |
| 100 - 245 | R 33.644 | R 168.22 |
| 250 - 995 | R 32.298 | R 161.49 |
| 1000 + | R 31.006 | R 155.03 |
*price indicative
- RS stock no.:
- 258-7787
- Mfr. Part No.:
- SPD15P10PGBTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TSDSON | |
| Series | SPD15P10P | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.24Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.35V | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TSDSON | ||
Series SPD15P10P | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.24Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.35V | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon SIPMOS power transistor belongs highly innovative OptiMOS family P channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics.
Enhancement mode
Avalanche rated
Pb free lead plating
RoHS compliant
Related links
- Infineon SPD15P10P Type P-Channel MOSFET 100 V Enhancement, 3-Pin TSDSON
- Infineon SPD15P10P Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon SPD15P10P Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 SPD15P10PLGBTMA1
- Infineon SPD15P10P Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon SPD15P10P Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 SPD04P10PGBTMA1
- Toshiba Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Toshiba Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 TJ15P04M3
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC