Infineon HEXFET Type N-Channel MOSFET, 17 A, 100 V TO-263 IRL530NSTRLPBF
- RS stock no.:
- 258-3992
- Mfr. Part No.:
- IRL530NSTRLPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 137,29
(exc. VAT)
R 157,885
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 50 unit(s) shipping from 30 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 27.458 | R 137.29 |
| 10 - 95 | R 26.772 | R 133.86 |
| 100 - 245 | R 25.968 | R 129.84 |
| 250 - 495 | R 24.93 | R 124.65 |
| 500 + | R 23.932 | R 119.66 |
*price indicative
- RS stock no.:
- 258-3992
- Mfr. Part No.:
- IRL530NSTRLPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Maximum Power Dissipation Pd | 3.8W | |
| Typical Gate Charge Qg @ Vgs | 22.7nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-40-548 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Maximum Power Dissipation Pd 3.8W | ||
Typical Gate Charge Qg @ Vgs 22.7nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Distrelec Product Id 304-40-548 | ||
The Infineon HEXFET power MOSFET is fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard surface-mount power package
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