Infineon IPP Type N-Channel MOSFET, 73 A, 100 V, 3-Pin TO-220
- RS stock no.:
- 258-3892
- Mfr. Part No.:
- IPP083N10N5AKSA1
- Manufacturer:
- Infineon
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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS stock no.:
- 258-3892
- Mfr. Part No.:
- IPP083N10N5AKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 73A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | IPP | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.3mΩ | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 73A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series IPP | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.3mΩ | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter.
Ideal for high switching frequency
Output capacitance reduction of up to 44%
Less paralleling required
Increased power density
Low voltage overshoot
Related links
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