Infineon IPI Type N-Channel MOSFET, 136 A, 60 V P TDSON
- RS stock no.:
- 258-3884
- Mfr. Part No.:
- IPI029N06NAKSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 tube of 50 units)*
R 1 042,15
(exc. VAT)
R 1 198,45
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | R 20.843 | R 1,042.15 |
| 100 - 100 | R 20.322 | R 1,016.10 |
| 150 + | R 19.712 | R 985.60 |
*price indicative
- RS stock no.:
- 258-3884
- Mfr. Part No.:
- IPI029N06NAKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 136A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TDSON | |
| Series | IPI | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Channel Mode | P | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 136A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TDSON | ||
Series IPI | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Channel Mode P | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS power-transistor is optimized for synchronous rectification in switched mode power supplies such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
40% improvement of FOM over similar devices
RoHS compliant - halogen free
MSL1 rated
Highest system efficiency
Less paralleling required
Increased power density
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