Infineon IPD Type P-Channel MOSFET, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90P03P404ATMA2
- RS stock no.:
- 229-1839
- Mfr. Part No.:
- IPD90P03P404ATMA2
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 296,17
(exc. VAT)
R 340,60
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 8,790 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 29.617 | R 296.17 |
| 20 - 90 | R 28.877 | R 288.77 |
| 100 - 240 | R 28.011 | R 280.11 |
| 250 - 490 | R 26.891 | R 268.91 |
| 500 + | R 25.815 | R 258.15 |
*price indicative
- RS stock no.:
- 229-1839
- Mfr. Part No.:
- IPD90P03P404ATMA2
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.3V | |
| Maximum Power Dissipation Pd | 137W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.5mm | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.3V | ||
Maximum Power Dissipation Pd 137W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.5mm | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon n channel normal level power MOSFET used for automotive applications. It has lowest switching and conduction power losses for highest thermal efficiency. It is robust packages with superior quality and reliability.
It is RoHS compliant and AEC qualified
It has 175°C operating temperature
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