Infineon IPD Type N-Channel MOSFET, 14 A, 650 V N TO-252 IPD60R600PFD7SAUMA1

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Subtotal (1 pack of 5 units)*

R 81,71

(exc. VAT)

R 93,965

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 16.342R 81.71
10 - 95R 15.934R 79.67
100 - 245R 15.456R 77.28
250 - 495R 14.838R 74.19
500 +R 14.244R 71.22

*price indicative

Packaging Options:
RS stock no.:
258-3860
Mfr. Part No.:
IPD60R600PFD7SAUMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

14A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Maximum Drain Source Resistance Rds

210mΩ

Channel Mode

N

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The CoolMOS PFD7 super junction MOSFET in a TO 252 DPAK package features RDS(on) of 2,000mOhm leading to low switching losses. An implemented fast body diode secures a robust device and in turn reduced bill-of material for the customer. Additionally, our industry-leading SMD package offering contributes to PCB space savings and simplifies manufacturing.

Wide range of RDS(on) values

Excellent commutation ruggedness

Low EMI

Broad package portfolio

BOM cost reduction and easy manufacturing

Robustness and reliability

Easy to select the right parts for design fine-tuning

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