Infineon IPD Type N-Channel MOSFET, 67 A, 100 V P, 3-Pin TO-252 IPD12CN10NGATMA1

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Subtotal (1 pack of 2 units)*

R 53,99

(exc. VAT)

R 62,088

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 26.995R 53.99
10 - 98R 26.32R 52.64
100 - 248R 25.53R 51.06
250 - 498R 24.51R 49.02
500 +R 23.53R 47.06

*price indicative

Packaging Options:
RS stock no.:
258-3835
Mfr. Part No.:
IPD12CN10NGATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

67A

Maximum Drain Source Voltage Vds

100V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.4mΩ

Channel Mode

P

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

125W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

49nC

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM

Excellent switching performance

World’s lowest R DS(on)

Environmentally friendly

Increased efficiency

Highest power density

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