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Infineon IPD Type N-Channel MOSFET, 67 A, 100 V P, 3-Pin TO-252 IPD12CN10NGATMA1

RS stock no.:: 258-3835
Mfr. Part No.:: IPD12CN10NGATMA1
Manufacturer:: Infineon

Infineon IPD Type N-Channel MOSFET, 67 A, 100 V P, 3-Pin TO-252 IPD12CN10NGATMA1

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Bulk discount available

Subtotal (1 pack of 2 units)*

R 74,50

(exc. VAT)

R 85,68

(inc. VAT)

FREE delivery for orders over R 1,500.00

In Stock

Plus 2,474 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 8	R 37.25	R 74.50
10 - 98	R 36.32	R 72.64
100 - 248	R 35.23	R 70.46
250 - 498	R 33.82	R 67.64
500 +	R 32.465	R 64.93

*price indicative

RS stock no.:: 258-3835
Mfr. Part No.:: IPD12CN10NGATMA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	67A
	Maximum Drain Source Voltage Vds	100V
	Series	IPD
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	12.4mΩ
	Channel Mode	P
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	49nC
	Maximum Power Dissipation Pd	125W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 67A
	Maximum Drain Source Voltage Vds 100V
	Series IPD
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 12.4mΩ
	Channel Mode P
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 49nC
	Maximum Power Dissipation Pd 125W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IPD12CN10NGATMA1

The Infineon OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM

Excellent switching performance

World’s lowest R DS(on)

Environmentally friendly

Increased efficiency

Highest power density

Infineon IPD Type N-Channel MOSFET, 67 A, 100 V P, 3-Pin TO-252 IPD12CN10NGATMA1

FREE delivery for orders over R 1,500.00

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