Infineon HEXFET N-Channel MOSFET, 7.60 A, 30 V Enhancement PQFN IRLHS6376TRPBF
- RS stock no.:
- 257-9447
- Mfr. Part No.:
- IRLHS6376TRPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (10 units, in packs of 10)*
R 93,99
(exc. VAT)
R 108,09
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 06 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 9.399 | R 93.99 |
| 50 - 90 | R 9.164 | R 91.64 |
| 100 - 490 | R 8.889 | R 88.89 |
| 500 - 1990 | R 8.533 | R 85.33 |
| 2000 + | R 8.192 | R 81.92 |
*price indicative
- RS stock no.:
- 257-9447
- Mfr. Part No.:
- IRLHS6376TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 7.60A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 63mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 4.9W | |
| Typical Gate Charge Qg @ Vgs | 2.8nC | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 7.60A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 63mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 4.9W | ||
Typical Gate Charge Qg @ Vgs 2.8nC | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRLHS series is the 30V Dual N channel strong IRFET power mosfet in a PQFN 2x2 package. The strong IRFET power mosfet family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount power package
Low RDS (on) in a small package
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