Infineon HEXFET Type N-Channel MOSFET, 127 A, 100 V TO-220 IRFB4310ZPBF

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Subtotal (1 pack of 2 units)*

R 88,37

(exc. VAT)

R 101,626

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 44.185R 88.37
10 - 18R 43.08R 86.16
20 - 48R 41.79R 83.58
50 - 98R 40.12R 80.24
100 +R 38.515R 77.03

*price indicative

Packaging Options:
RS stock no.:
257-9349
Mfr. Part No.:
IRFB4310ZPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

127A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Maximum Drain Source Resistance Rds

15mΩ

Forward Voltage Vf

1.3V

Standards/Approvals

No

Automotive Standard

No

The Infineon IRFB series is the 100V single n channel strong IRFET power mosfet in a TO 220 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Industry standard through hole power package

High current rating

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Softer body diode compared to previous silicon generation

Wide portfolio available

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