Infineon HEXFET Type N-Channel MOSFET, 217 A, 40 V DirectFET IRF7480MTRPBF
- RS stock no.:
- 257-9314
- Mfr. Part No.:
- IRF7480MTRPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 64,50
(exc. VAT)
R 74,18
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 4,764 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | R 32.25 | R 64.50 |
| 50 - 98 | R 31.445 | R 62.89 |
| 100 - 498 | R 30.50 | R 61.00 |
| 500 - 1998 | R 29.28 | R 58.56 |
| 2000 + | R 28.11 | R 56.22 |
*price indicative
- RS stock no.:
- 257-9314
- Mfr. Part No.:
- IRF7480MTRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 217A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | DirectFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Typical Gate Charge Qg @ Vgs | 123nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 96W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 217A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type DirectFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Typical Gate Charge Qg @ Vgs 123nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 96W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the 40V single n channel strong IRFET power mosfet in a direct FET ME package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.
Dual side cooling capability
Low package height of 0.7mm
Low parasitic (1 to 2 nH) inductance package
100 percent lead free (No ROHS exemption)
Silicon optimized for applications switching below 100 kHz
Product qualification according to JEDEC standard
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