Infineon HEXFET Type N-Channel MOSFET, 162 A, 40 V TO-263 IRF1404STRLPBF
- RS stock no.:
- 257-9274
- Distrelec Article No.:
- 304-40-515
- Mfr. Part No.:
- IRF1404STRLPBF
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 104,97
(exc. VAT)
R 120,716
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 728 unit(s) shipping from 19 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 52.485 | R 104.97 |
| 10 - 48 | R 51.175 | R 102.35 |
| 50 - 98 | R 49.64 | R 99.28 |
| 100 - 248 | R 47.655 | R 95.31 |
| 250 + | R 45.75 | R 91.50 |
*price indicative
- RS stock no.:
- 257-9274
- Distrelec Article No.:
- 304-40-515
- Mfr. Part No.:
- IRF1404STRLPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 162A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 162A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the 40V single n channel HEXFET power mosfet in a D2 Pak package.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Optimized for 10 V gate drive voltage (called normal level)
Industry standard surface mount power package
High current carrying capability package (up to 195 A, die size dependent)
Capable of being wave soldered
Related links
- Infineon HEXFET Type N-Channel MOSFET 40 V TO-263
- Infineon HEXFET Type N-Channel MOSFET & Diode 40 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET & Diode 40 V Enhancement, 3-Pin TO-263 AUIRF1404STRL
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 250 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 150 V TO-263