Infineon HEXFET Type N-Channel MOSFET, 162 A, 40 V TO-263 IRF1404STRLPBF

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Subtotal (1 pack of 2 units)*

R 104,97

(exc. VAT)

R 120,716

(inc. VAT)

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  • 728 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8R 52.485R 104.97
10 - 48R 51.175R 102.35
50 - 98R 49.64R 99.28
100 - 248R 47.655R 95.31
250 +R 45.75R 91.50

*price indicative

Packaging Options:
RS stock no.:
257-9274
Mfr. Part No.:
IRF1404STRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

162A

Maximum Drain Source Voltage Vds

40V

Series

HEXFET

Package Type

TO-263

Maximum Drain Source Resistance Rds

4mΩ

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

200W

Typical Gate Charge Qg @ Vgs

160nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

Distrelec Product Id

304-40-515

The Infineon IRF series is the 40V single n channel HEXFET power mosfet in a D2 Pak package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Optimized for 10 V gate drive voltage (called normal level)

Industry standard surface mount power package

High current carrying capability package (up to 195 A, die size dependent)

Capable of being wave soldered

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