Infineon HEXFET Type N-Channel MOSFET, 40 A, 20 V PQFN IRLHM620TRPBF

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Subtotal (1 pack of 5 units)*

R 94,96

(exc. VAT)

R 109,205

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45R 18.992R 94.96
50 - 95R 18.518R 92.59
100 - 495R 17.962R 89.81
500 - 1995R 17.244R 86.22
2000 +R 16.554R 82.77

*price indicative

Packaging Options:
RS stock no.:
257-5802
Mfr. Part No.:
IRLHM620TRPBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

20V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

2.5mΩ

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

37W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface-mount package

Potential alternative to high-RDS(on) SuperSO8 package

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