Vishay Type P-Channel MOSFET, 1.1 A, 50 V, 3-Pin HVMDIP
- RS stock no.:
- 256-7282
- Mfr. Part No.:
- IRFD9010PBF
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 tube of 100 units)*
R 1 577,10
(exc. VAT)
R 1 813,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 200 unit(s), ready to ship from another location
Units | Per unit | Per Tube* |
|---|---|---|
| 100 - 400 | R 15.771 | R 1,577.10 |
| 500 - 900 | R 15.376 | R 1,537.60 |
| 1000 - 2400 | R 14.915 | R 1,491.50 |
| 2500 + | R 14.318 | R 1,431.80 |
*price indicative
- RS stock no.:
- 256-7282
- Mfr. Part No.:
- IRFD9010PBF
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.1A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | HVMDIP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1W | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.1A | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type HVMDIP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1W | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Semiconductor P-channel mosfet HVMDIPs are intended for use in power stages where complementary symmetry with n-channel devices offers circuit simplification. The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness.
For automatic insertion
Compact, end stackable
Fast switching
Low drive current
Easy paralleled
Excellent temperature stability
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