Vishay Type P-Channel MOSFET, 19 A, 55 V, 3-Pin TO-252 IRF9Z34SPBF
- RS stock no.:
- 256-7281
- Mfr. Part No.:
- IRF9Z34SPBF
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 256,81
(exc. VAT)
R 295,33
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 980 unit(s) shipping from 11 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 51.362 | R 256.81 |
| 10 - 20 | R 50.078 | R 250.39 |
| 25 - 95 | R 48.576 | R 242.88 |
| 100 - 495 | R 46.632 | R 233.16 |
| 500 + | R 44.766 | R 223.83 |
*price indicative
- RS stock no.:
- 256-7281
- Mfr. Part No.:
- IRF9Z34SPBF
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 88W | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 88W | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Semiconductor third generation power mosfets utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of application. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4.
Advanced process technology
Surface mount
175 °C operating temperature
Fast switching
P-channel
Fully avalanche rated
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