DiodesZetex Type N-Channel MOSFET, 26 A, 100 V Enhancement, 8-Pin PowerDI3333-8 DMTH10H032LFVWQ-13
- RS stock no.:
- 254-8653
- Mfr. Part No.:
- DMTH10H032LFVWQ-13
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 118,93
(exc. VAT)
R 136,77
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 1,600 unit(s) shipping from 19 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 11.893 | R 118.93 |
| 50 - 90 | R 11.596 | R 115.96 |
| 100 - 240 | R 11.248 | R 112.48 |
| 250 - 990 | R 10.798 | R 107.98 |
| 1000 + | R 10.366 | R 103.66 |
*price indicative
- RS stock no.:
- 254-8653
- Mfr. Part No.:
- DMTH10H032LFVWQ-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerDI3333-8 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 1.73W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 0.8mm | |
| Length | 3.3mm | |
| Width | 3.3 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerDI3333-8 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 1.73W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 0.8mm | ||
Length 3.3mm | ||
Width 3.3 mm | ||
Automotive Standard AEC-Q101 | ||
The DiodeZetex enhancement mode MOSFET has been designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in backlighting, dc to dc converters and power management functi
Low on resistance
Wet table flank for improved optical inspection
Low switching losses
Halogen and antimony free
Related links
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