DiodesZetex Type P-Channel MOSFET, 30 V X2-DFN0806-6 DMP32D9UDAQ-7B
- RS stock no.:
- 254-8638
- Mfr. Part No.:
- DMP32D9UDAQ-7B
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 91,70
(exc. VAT)
R 105,45
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 10,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 475 | R 3.668 | R 91.70 |
| 500 - 975 | R 3.577 | R 89.43 |
| 1000 - 2475 | R 3.47 | R 86.75 |
| 2500 - 4975 | R 3.331 | R 83.28 |
| 5000 + | R 3.198 | R 79.95 |
*price indicative
- RS stock no.:
- 254-8638
- Mfr. Part No.:
- DMP32D9UDAQ-7B
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | X2-DFN0806-6 | |
| Mount Type | Surface | |
| Typical Gate Charge Qg @ Vgs | 0.35nC | |
| Forward Voltage Vf | -0.6V | |
| Maximum Power Dissipation Pd | 0.36W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type X2-DFN0806-6 | ||
Mount Type Surface | ||
Typical Gate Charge Qg @ Vgs 0.35nC | ||
Forward Voltage Vf -0.6V | ||
Maximum Power Dissipation Pd 0.36W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The DiodeZetex P channel enhancement mode MOSFET has been designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is applicable in general purpose inte
Low on resistance
Low input capacitance
Halogen and antimony Free
ESD protected gate
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