Vishay Type P-Channel MOSFET, 7.5 A, 20 V Enhancement, 7-Pin PowerPAK SC-70W-6L SQA413CEJW-T1_GE3
- RS stock no.:
- 252-0302
- Mfr. Part No.:
- SQA413CEJW-T1_GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 25 units)*
R 175,375
(exc. VAT)
R 201,675
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 3,050 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 7.015 | R 175.38 |
| 50 - 75 | R 6.84 | R 171.00 |
| 100 - 225 | R 6.634 | R 165.85 |
| 250 - 975 | R 6.369 | R 159.23 |
| 1000 + | R 6.114 | R 152.85 |
*price indicative
- RS stock no.:
- 252-0302
- Mfr. Part No.:
- SQA413CEJW-T1_GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 7.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | PowerPAK SC-70W-6L | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.21mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 13.6W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 5.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 2.05mm | |
| Width | 2.05 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 7.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type PowerPAK SC-70W-6L | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.21mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 13.6W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 5.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 2.05mm | ||
Width 2.05 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.
TrenchFET power MOSFET
AEC-Q101 qualified
Wettable flank terminals
100 % Rg and UIS tested
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