Vishay Type N-Channel MOSFET, 49.3 A, 60 V Depletion, 8-Pin PowerPAK SO-8 SIR4604DP-T1-GE3

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Subtotal (1 pack of 5 units)*

R 117,76

(exc. VAT)

R 135,425

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45R 23.552R 117.76
50 - 95R 22.964R 114.82
100 - 245R 22.276R 111.38
250 - 995R 21.384R 106.92
1000 +R 20.528R 102.64

*price indicative

Packaging Options:
RS stock no.:
252-0273
Mfr. Part No.:
SIR4604DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

49.3A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01mΩ

Channel Mode

Depletion

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

56nC

Maximum Power Dissipation Pd

83W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Width

5.15 mm

Length

6.15mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

TrenchFET Gen V power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

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