Infineon IAUC Type N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin TSDSON IAUZ40N06S5L050ATMA1
- RS stock no.:
- 249-8631
- Mfr. Part No.:
- IAUZ40N06S5L050ATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 122,67
(exc. VAT)
R 141,07
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 5,000 unit(s) shipping from 16 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 24.534 | R 122.67 |
| 10 - 95 | R 23.92 | R 119.60 |
| 100 - 245 | R 23.202 | R 116.01 |
| 250 - 495 | R 22.274 | R 111.37 |
| 500 + | R 21.384 | R 106.92 |
*price indicative
- RS stock no.:
- 249-8631
- Mfr. Part No.:
- IAUZ40N06S5L050ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IAUC | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IAUC | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 60V, N-Ch, 5 mohm, Automotive MOSFET with OptiMOS 5 technology for 60V MOSFETs in the industry standard S3O8 3 mm x 3 mm small footprint package with leading performance providing low RDSon, QG and Gate capacitance and minimizing conduction and switching losses.
OptiMOS power MOSFET for automotive applications
N-channel, Enhancement mode, Logic Level
Extended qualification beyond AEC-Q101
Enhanced electrical testing
Robust design
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)
100 percent Avalanche tested
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