Infineon iPB Type N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-263 IPB80N06S4L07ATMA2

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Subtotal (1 pack of 2 units)*

R 58,92

(exc. VAT)

R 67,76

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 29.46R 58.92
10 - 98R 28.725R 57.45
100 - 248R 27.865R 55.73
250 - 498R 26.75R 53.50
500 +R 25.68R 51.36

*price indicative

Packaging Options:
RS stock no.:
249-6904
Mfr. Part No.:
IPB80N06S4L07ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.

175°C operating temperature

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