Infineon AUIRFS Type N-Channel MOSFET, 230 A, 75 V, 3-Pin TO-220
- RS stock no.:
- 249-6865
- Mfr. Part No.:
- AUIRF1404Z
- Manufacturer:
- Infineon
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View bulk pricing optionSubtotal (1 tube of 50 units)*
R 4 343,45
(exc. VAT)
R 4 994,95
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 900 unit(s) shipping from 01 June 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | R 86.869 | R 4,343.45 |
| 100 - 100 | R 84.698 | R 4,234.90 |
| 150 + | R 82.157 | R 4,107.85 |
*price indicative
- RS stock no.:
- 249-6865
- Mfr. Part No.:
- AUIRF1404Z
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 230A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-220 | |
| Series | AUIRFS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Standards/Approvals | RoHS | |
| Length | 16.51mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 230A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-220 | ||
Series AUIRFS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Standards/Approvals RoHS | ||
Length 16.51mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified
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