ROHM Type N-Channel MOSFET, 10.7 A, 60 V Enhancement, 3-Pin TO-220AB RX3L07BGNC16
- RS stock no.:
- 249-1140
- Mfr. Part No.:
- RX3L07BGNC16
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 202,59
(exc. VAT)
R 232,98
(inc. VAT)
Add 40 units to get free delivery
Being discontinued
- Final 965 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 40.518 | R 202.59 |
| 50 - 95 | R 39.506 | R 197.53 |
| 100 - 245 | R 38.32 | R 191.60 |
| 250 - 495 | R 36.788 | R 183.94 |
| 500 + | R 35.316 | R 176.58 |
*price indicative
- RS stock no.:
- 249-1140
- Mfr. Part No.:
- RX3L07BGNC16
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220AB | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220AB | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM N channel power MOSFET with low on-resistance and fast switching, suitable for the switching application, has 60 V drain-source voltage and 70 A drain current, tube packing type.
Low on-resistance
RoHS compliant
Pb-free plating
100 percent UIS tested
Halogen free
Related links
- ROHM Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220AB
- DiodesZetex ZXMN6A25K Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 ZXMN6A25KTC
- DiodesZetex ZXMN6A25K Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- ROHM R6515KNX3 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 R6515KNX3C16
- ROHM RCJ331N25 Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263 RCJ331N25TL
- ROHM R6520KNX3 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 R6520KNX3C16
- ROHM R6524KNX3 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 R6524KNX3C16
- ROHM RCJ451N20 Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 RCJ451N20TL