STMicroelectronics STP Type N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-220
- RS stock no.:
- 248-9689P
- Mfr. Part No.:
- STP65N045M9
- Manufacturer:
- STMicroelectronics
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Subtotal 10 units (supplied in a tube)*
R 1 397,60
(exc. VAT)
R 1 607,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 455 unit(s) shipping from 10 March 2026
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Units | Per unit |
|---|---|
| 10 - 19 | R 139.76 |
| 20 - 29 | R 135.57 |
| 30 - 39 | R 130.15 |
| 40 + | R 124.94 |
*price indicative
- RS stock no.:
- 248-9689P
- Mfr. Part No.:
- STP65N045M9
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | STP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 245W | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.6mm | |
| Standards/Approvals | UL | |
| Width | 10.4 mm | |
| Length | 28.9mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series STP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 245W | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 175°C | ||
Height 4.6mm | ||
Standards/Approvals UL | ||
Width 10.4 mm | ||
Length 28.9mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics product is a N channel power MOSFET based on the most innovative super junction MDmesh DM9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS on per area coupled with a fast recovery diode. The silicon based DM9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Worldwide best FOM RDS on Qg among silicon based devices
Higher VDSS rating
Higher dv/dt capability
Excellent switching performance
Easy to drive
100 percent avalanche tested