DiodesZetex Type P-Channel MOSFET, 79 A, 40 V Enhancement, 3-Pin TO-252 DMPH4011SK3-13
- RS stock no.:
- 246-7536
- Mfr. Part No.:
- DMPH4011SK3-13
- Manufacturer:
- DiodesZetex
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 113,79
(exc. VAT)
R 130,86
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,230 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 22.758 | R 113.79 |
| 50 - 95 | R 22.19 | R 110.95 |
| 100 - 245 | R 21.524 | R 107.62 |
| 250 - 995 | R 20.664 | R 103.32 |
| 1000 + | R 19.838 | R 99.19 |
*price indicative
- RS stock no.:
- 246-7536
- Mfr. Part No.:
- DMPH4011SK3-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 79A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Maximum Power Dissipation Pd | 1.73W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 6.1mm | |
| Length | 6.58mm | |
| Height | 2.29mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 79A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 8V | ||
Maximum Power Dissipation Pd 1.73W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 6.1mm | ||
Length 6.58mm | ||
Height 2.29mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes a new generation dual N-channel enhancement mode MOSFET, it has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in TO252 packaging. It offers fast switching and high efficiency. It is rated to +175°C and ideal for high ambient temperature environments. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 40 V and maximum gate to source voltage is ±20 V It offers low on-resistance Fast switching speed
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