DiodesZetex 2 Type N-Channel MOSFET, 20 V Enhancement, 6-Pin SOT-363 DMN2710UDW-7
- RS stock no.:
- 246-7513
- Mfr. Part No.:
- DMN2710UDW-7
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 pack of 25 units)*
R 88,375
(exc. VAT)
R 101,625
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,825 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 3.535 | R 88.38 |
| 50 - 75 | R 3.446 | R 86.15 |
| 100 - 225 | R 3.343 | R 83.58 |
| 250 - 975 | R 3.21 | R 80.25 |
| 1000 + | R 3.081 | R 77.03 |
*price indicative
- RS stock no.:
- 246-7513
- Mfr. Part No.:
- DMN2710UDW-7
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.75Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Maximum Power Dissipation Pd | 0.36W | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.75Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Maximum Power Dissipation Pd 0.36W | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SOT363 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 20 V and Maximum gate to source voltage is ±6 V It offers a ultra-small package size It has low input/output leakage
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