DiodesZetex 2 Type N-Channel MOSFET, 20 V Enhancement, 6-Pin U-DFN2030 DMN2014LHAB-13

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Subtotal (1 pack of 25 units)*

R 78,85

(exc. VAT)

R 90,675

(inc. VAT)

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Last RS stock
  • Final 9,950 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
25 - 475R 3.154R 78.85
500 - 975R 3.075R 76.88
1000 - 2475R 2.982R 74.55
2500 +R 2.863R 71.58

*price indicative

Packaging Options:
RS stock no.:
246-7508
Mfr. Part No.:
DMN2014LHAB-13
Manufacturer:
DiodesZetex
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Brand

DiodesZetex

Product Type

MOSFET

Channel Type

Type N

Maximum Drain Source Voltage Vds

20V

Package Type

U-DFN2030

Pin Count

6

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

16nC

Maximum Power Dissipation Pd

0.8W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±12 V

Forward Voltage Vf

0.75V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The DiodesZetex makes a new generation dual N-channel enhancement mode MOSFET, it has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN2030-6 packaging. It offers fast switching and high efficiency. It has working temperature range of -55°C to +150°C. It offers low input capacitance and fast switching speed.

Maximum drain to source voltage is 20 V and maximum gate to source voltage is ±16 V It offers low on-resistance and low gate threshold voltage ESD protected gate

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