Infineon IPT Type N-Channel MOSFET, 400 A, 800 V, 8-Pin TO-263 IPT012N08N5ATMA1

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R 120,79

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R 138,91

(inc. VAT)

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1 - 9R 120.79
10 - 99R 117.77
100 - 249R 114.24
250 - 499R 109.67
500 +R 105.28

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Packaging Options:
RS stock no.:
244-0902
Mfr. Part No.:
IPT012N08N5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

400A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-263

Series

IPT

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.2mΩ

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Infineon’s OptiMOS power MOSFET in TO-Leadless package is optimized for high current applications up to 300 A, such as forklifts, light electric vehicles (LEV), power tools, point-of-loads (POL), telecom and e-fuses. Furthermore, the 60 percent smaller package size enables a very compact design.

N-channel, normal level

100% avalanche tested

Pb-free plating

RoHS compliant

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