Nexperia Type P-Channel MOSFET, 20.2 A, 20 V Enhancement, 8-Pin MLPAK33 PXP8R3-20QXJ

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Subtotal (1 pack of 10 units)*

R 139,44

(exc. VAT)

R 160,36

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40R 13.944R 139.44
50 - 90R 13.595R 135.95
100 - 240R 13.187R 131.87
250 - 990R 12.66R 126.60
1000 +R 12.154R 121.54

*price indicative

Packaging Options:
RS stock no.:
243-4895
Mfr. Part No.:
PXP8R3-20QXJ
Manufacturer:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

20.2A

Maximum Drain Source Voltage Vds

20V

Package Type

MLPAK33

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

13.6mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Nexperia P-channel enhancement mode field effect transistor (FET) in a MLPAK33 (SOT8002) surface mounted device (SMD) plastic package having trench MOSFET technology.

Low threshold voltage

Trench MOSFET technology

High-side load switch

Battery management

DC-to-DC conversion

Switching circuits

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