Nexperia Type P-Channel MOSFET, 20.2 A, 20 V Enhancement, 8-Pin MLPAK33 PXP8R3-20QXJ
- RS stock no.:
- 243-4895
- Mfr. Part No.:
- PXP8R3-20QXJ
- Manufacturer:
- Nexperia
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 137,37
(exc. VAT)
R 157,98
(inc. VAT)
Add 120 units to get free delivery
In Stock
- Plus 1,640 unit(s) shipping from 16 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 13.737 | R 137.37 |
| 50 - 90 | R 13.394 | R 133.94 |
| 100 - 240 | R 12.992 | R 129.92 |
| 250 - 990 | R 12.472 | R 124.72 |
| 1000 + | R 11.973 | R 119.73 |
*price indicative
- RS stock no.:
- 243-4895
- Mfr. Part No.:
- PXP8R3-20QXJ
- Manufacturer:
- Nexperia
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 20.2A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | MLPAK33 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 20.2A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type MLPAK33 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Nexperia P-channel enhancement mode field effect transistor (FET) in a MLPAK33 (SOT8002) surface mounted device (SMD) plastic package having trench MOSFET technology.
Low threshold voltage
Trench MOSFET technology
High-side load switch
Battery management
DC-to-DC conversion
Switching circuits
Related links
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- Nexperia Type P-Channel MOSFET 20 V Enhancement, 8-Pin MLPAK33
- Nexperia Type P-Channel MOSFET 20 V Enhancement, 8-Pin MLPAK33
- Nexperia Type P-Channel MOSFET 30 V Enhancement, 8-Pin MLPAK33