Nexperia Type P-Channel MOSFET, 10.3 A, 30 V Enhancement, 8-Pin MLPAK33

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Subtotal 50 units (supplied on a continuous strip)*

R 248,90

(exc. VAT)

R 286,25

(inc. VAT)

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Units
Per unit
50 - 75R 4.978
100 - 225R 4.829
250 - 975R 4.636
1000 +R 4.45

*price indicative

Packaging Options:
RS stock no.:
243-4881P
Mfr. Part No.:
PXP013-30QLJ
Manufacturer:
Nexperia
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Brand

Nexperia

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

10.3A

Maximum Drain Source Voltage Vds

30V

Package Type

MLPAK33

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

13.6mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Nexperia P-channel enhancement mode field-effect transistor (FET) in an MLPAK33 (SOT8002) surface-mounted device (SMD) plastic package using Trench MOSFET technology.

Low threshold voltage

Trench MOSFET technology

High-side load switch

Battery management

DC-to-DC conversion

Switching circuits

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