Nexperia PSMN4R2 2 Type N-Channel MOSFET, 42 A, 40 V, 8-Pin LFPAK56D PSMN4R2-40VSHX
- RS stock no.:
- 243-4875
- Mfr. Part No.:
- PSMN4R2-40VSHX
- Manufacturer:
- Nexperia
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 325,01
(exc. VAT)
R 373,76
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 1,500 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 65.002 | R 325.01 |
| 50 - 95 | R 63.376 | R 316.88 |
| 100 - 245 | R 61.474 | R 307.37 |
| 250 - 495 | R 59.016 | R 295.08 |
| 500 + | R 56.656 | R 283.28 |
*price indicative
- RS stock no.:
- 243-4875
- Mfr. Part No.:
- PSMN4R2-40VSHX
- Manufacturer:
- Nexperia
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | PSMN4R2 | |
| Package Type | LFPAK56D | |
| Pin Count | 8 | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Power Dissipation Pd | 46W | |
| Maximum Gate Source Voltage Vgs | -20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series PSMN4R2 | ||
Package Type LFPAK56D | ||
Pin Count 8 | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Power Dissipation Pd 46W | ||
Maximum Gate Source Voltage Vgs -20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Nexperia Dual, standard level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Next power S3 technology. An internal connection is made between the source (S1) of the high-side FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge switch in high-performance PWM and space constrained motor drive applications.
Reduced PCB layout complexity
Module shrinkage through reduced component count
Lower parasitic inductance to support higher efficiency
Low power losses, high power density
Superior avalanche performance
Repetitive avalanche rated
LFPAK copper clip packaging provides high robustness and reliability
Handheld power tools, portable appliance and space constrained applications
Brushless or brushed DC motor drive
DC-to-DC systems
LED lighting
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