Nexperia 2 Type N-Channel MOSFET, 42 A, 40 V, 8-Pin LFPAK56D BUK9V13-40HX

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Subtotal (1 pack of 5 units)*

R 113,04

(exc. VAT)

R 129,995

(inc. VAT)

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  • Shipping from 22 September 2026
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Units
Per unit
Per Pack*
5 - 45R 22.608R 113.04
50 - 95R 22.042R 110.21
100 - 245R 21.38R 106.90
250 - 495R 20.524R 102.62
500 +R 19.704R 98.52

*price indicative

Packaging Options:
RS stock no.:
240-1822
Mfr. Part No.:
BUK9V13-40HX
Manufacturer:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

42A

Maximum Drain Source Voltage Vds

40V

Package Type

LFPAK56D

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

13.6mΩ

Maximum Power Dissipation Pd

46W

Maximum Gate Source Voltage Vgs

-20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

13.9nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The Nexperia dual, logic level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 Trench MOS technology. This product has been designed and qualified to AEC-Q101.

LFPAK56D package with half-bridge configuration enables

Reduced PCB layout complexity

PCB shrinkage through reduced component footprint for 3-phase motor drive

Improved system level Rth(j-amb) due to optimized package design

Lower parasitic inductance to support higher efficiency

Footprint compatibility with LFPAK56D Dual package

Advanced AEC-Q101 grade Trench 9 silicon technology

Low power losses, high power density

Superior avalanche performance

Repetitive avalanche rated

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