Infineon BSG0810NDI 2 Type N-Channel MOSFET, 50 A, 25 V, 8-Pin TISON-8 BSG0810NDIATMA1

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Subtotal (1 pack of 2 units)*

R 110,23

(exc. VAT)

R 126,764

(inc. VAT)

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Orders below R 1 500,00 (exc. VAT) cost R 120,00.
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Units
Per unit
Per Pack*
2 - 8R 55.115R 110.23
10 - 98R 53.735R 107.47
100 - 248R 52.125R 104.25
250 - 498R 50.04R 100.08
500 +R 48.04R 96.08

*price indicative

Packaging Options:
RS stock no.:
242-0301
Mfr. Part No.:
BSG0810NDIATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

25V

Package Type

TISON-8

Series

BSG0810NDI

Pin Count

8

Maximum Gate Source Voltage Vgs

±16 V

Maximum Power Dissipation Pd

6.25W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

8.4nC

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS, IEC61249-2-21, JEDEC1

Number of Elements per Chip

2

Automotive Standard

No

The Infineon Power Block is a dual asymmetric N-channel OptiMOS 5 MOSFET. It is monolithic integrated Schottky like diode.

Halogen-free according to IEC61249-2-21

Pb-free lead plating and RoHS compliant

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