Infineon Dual OptiMOS 2 Type N-Channel MOSFET, 40 A, 25 V Enhancement, 8-Pin TISON-8
- RS stock no.:
- 214-8976
- Mfr. Part No.:
- BSC0910NDIATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 reel of 5000 units)*
R 73 295,00
(exc. VAT)
R 84 290,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 26 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | R 14.659 | R 73,295.00 |
| 10000 - 10000 | R 14.292 | R 71,460.00 |
| 15000 + | R 13.863 | R 69,315.00 |
*price indicative
- RS stock no.:
- 214-8976
- Mfr. Part No.:
- BSC0910NDIATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | OptiMOS | |
| Package Type | TISON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 0.87V | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 5mm | |
| Width | 6 mm | |
| Standards/Approvals | RoHS, IEC61249-2-21, JEDEC1 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series OptiMOS | ||
Package Type TISON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 0.87V | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 5mm | ||
Width 6 mm | ||
Standards/Approvals RoHS, IEC61249-2-21, JEDEC1 | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. The Dual N-channel OptiMOS MOSFETs, comes Halogen-free according to IEC61249-2-21 and Pb-free lead plating; RoHS compliant.
Monolithic integrated Schottky-like diode
Optimized for high performance buck converters
100% avalanche tested
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