Infineon IPG20N06S4L-14A 2 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin SuperSO8 5 x 6 IPG20N06S4L14AATMA1
- RS stock no.:
- 241-9688
- Mfr. Part No.:
- IPG20N06S4L14AATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 74,03
(exc. VAT)
R 85,135
(inc. VAT)
FREE delivery for orders over R 1,500.00
Stock information currently inaccessible
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 14.806 | R 74.03 |
| 10 - 95 | R 14.436 | R 72.18 |
| 100 - 245 | R 14.002 | R 70.01 |
| 250 - 495 | R 13.442 | R 67.21 |
| 500 + | R 12.904 | R 64.52 |
*price indicative
- RS stock no.:
- 241-9688
- Mfr. Part No.:
- IPG20N06S4L14AATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | IPG20N06S4L-14A | |
| Package Type | SuperSO8 5 x 6 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±16 V | |
| Maximum Power Dissipation Pd | 50W | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series IPG20N06S4L-14A | ||
Package Type SuperSO8 5 x 6 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±16 V | ||
Maximum Power Dissipation Pd 50W | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS™-T2 N-channel automotive MOSFET has 60 V drain source voltage (VDS) & 20 A drain current (ID). It comes in dual SS08 (PG-TDSON-8) package. It is feasible for automatic optical inspection (AOI).
Dual N-channel Logic Level - Enhancement mode
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
100% Avalanche tested
Feasible for automatic optical inspection (AOI)
Related links
- Infineon IPG20N06S4L-14A 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon OptiMOS 5 Type N-Channel MOSFET 25 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon Half Bridge OptiMOSTM Type N-Channel Power Transistor 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC100N04S6L014ATMA1
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon Half Bridge IAUC60N04S6N050H Type N-Channel Power Transistor 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon IAUC Type N-Channel MOSFET 20 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC60N04S6N044ATMA1
- Infineon Half Bridge IAUC45N04S6L063H Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6