Microchip MSC750SMA170B N-Channel MOSFET, 5 A, 1.7 kV TO-247 MSC750SMA170B
- RS stock no.:
- 241-9278
- Distrelec Article No.:
- 304-24-072
- Mfr. Part No.:
- MSC750SMA170B
- Manufacturer:
- Microchip
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
R 183,84
(exc. VAT)
R 211,42
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 6 unit(s) shipping from 04 November 2026
- Plus 180 unit(s) shipping from 01 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 91.92 | R 183.84 |
| 10 - 98 | R 89.62 | R 179.24 |
| 100 + | R 86.93 | R 173.86 |
*price indicative
- RS stock no.:
- 241-9278
- Distrelec Article No.:
- 304-24-072
- Mfr. Part No.:
- MSC750SMA170B
- Manufacturer:
- Microchip
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 1.7kV | |
| Series | MSC750SMA170B | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 2V | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 1.7kV | ||
Series MSC750SMA170B | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 2V | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip silicon carbide power MOSFET product line from Micro semi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high voltage applications.
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance
Stable operation at high junction temperature TJ(max) equal to 175 °C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS compliant
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