Vishay Type N-Channel MOSFET, 214 A, 40 V Depletion, 8-Pin PowerPAK 1212-8SLW SQS140ENW-T1_GE3
- RS stock no.:
- 239-8683
- Mfr. Part No.:
- SQS140ENW-T1_GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 208,63
(exc. VAT)
R 239,92
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 3,000 unit(s) shipping from 26 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 20.863 | R 208.63 |
| 50 - 90 | R 20.341 | R 203.41 |
| 100 - 240 | R 19.731 | R 197.31 |
| 250 - 990 | R 18.942 | R 189.42 |
| 1000 + | R 18.184 | R 181.84 |
*price indicative
- RS stock no.:
- 239-8683
- Mfr. Part No.:
- SQS140ENW-T1_GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 214A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK 1212-8SLW | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.000253Ω | |
| Channel Mode | Depletion | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 197W | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Length | 3.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 214A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK 1212-8SLW | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.000253Ω | ||
Channel Mode Depletion | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 197W | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Length 3.3mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 40 V and 175 °C temperature. This MOSFET used for high power density.
Low resistance
AEC-Q101 qualified
UIS tested
Related links
- Vishay Type N-Channel MOSFET 40 V Depletion, 8-Pin PowerPAK 1212-8SLW
- Vishay SQS Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS140ELNW-T1_GE3
- Vishay Type N-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS141ELNW-T1_GE3
- Vishay Type N-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW
- Vishay Type N-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW
- Vishay Type N-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW
- Vishay Type N-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS142ELNW-T1_GE3
- Vishay Type N-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS160ELNW-T1_GE3