Vishay EF Type N-Channel MOSFET, 46 A, 650 V Depletion, 3-Pin TO-263 SIHB055N60EF-GE3

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Subtotal (1 unit)*

R 115,26

(exc. VAT)

R 132,55

(inc. VAT)

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1 - 9R 115.26
10 - 24R 112.38
25 - 99R 109.01
100 - 499R 104.65
500 +R 100.46

*price indicative

Packaging Options:
RS stock no.:
239-8627
Mfr. Part No.:
SIHB055N60EF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

46A

Maximum Drain Source Voltage Vds

650V

Series

EF

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.05Ω

Channel Mode

Depletion

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

278W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

63nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

125°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay EF series is power MOSFET With fast body Diode. This MOSFET used for server and telecom power supply, welding, and motor drives.

4th generation E series technology

Low effective capacitance

Low switching and conduction losses

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