Infineon CoolMOS Type N-Channel MOSFET, 12 A, 700 V, 3-Pin TO-220 IPP65R190CFD7XKSA1

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Bulk discount available

Subtotal (1 tube of 500 units)*

R 9 112,50

(exc. VAT)

R 10 479,50

(inc. VAT)

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Units
Per unit
Per Tube*
500 - 500R 18.225R 9,112.50
1000 - 1000R 17.769R 8,884.50
1500 +R 17.236R 8,618.00

*price indicative

RS stock no.:
236-3667
Mfr. Part No.:
IPP65R190CFD7XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

700V

Series

CoolMOS

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

190mΩ

Maximum Power Dissipation Pd

63W

Typical Gate Charge Qg @ Vgs

23nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

4.57 mm

Length

10.36mm

Height

9.45mm

Automotive Standard

No

The Infineon CoolMOS super junction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. It is ideally suited for industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. It has drain current of 12 A.

Excellent hard-commutation ruggedness

Extra safety margin for designs with increased bus voltage

Enabling increased power density

Outstanding light-load efficiency in industrial SMPS applications

Improved full-load efficiency in industrial SMPS applications

Price competitiveness compared to alternative offerings in the market

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