Infineon OptiMOS™ Type N-Channel MOSFET, 479 A, 25 V, 8-Pin TDSON BSC004NE2LS5ATMA1

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Bulk discount available

Subtotal (1 reel of 5000 units)*

R 77 570,00

(exc. VAT)

R 89 205,00

(inc. VAT)

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Units
Per unit
Per Reel*
5000 - 5000R 15.514R 77,570.00
10000 - 10000R 15.126R 75,630.00
15000 +R 14.672R 73,360.00

*price indicative

RS stock no.:
236-3639
Mfr. Part No.:
BSC004NE2LS5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

479A

Maximum Drain Source Voltage Vds

25V

Package Type

TDSON

Series

OptiMOS™

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.45mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

188W

Typical Gate Charge Qg @ Vgs

135nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

6.35 mm

Length

5.49mm

Height

1.1mm

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS power MOSFET offers Benchmark solutions by enabling highest power density and energy efficiency, both in stand by and full operation. It offers drain source on-state resistance of 0.45 m Ohm.

Highest efficiency

Highest power density in SuperSO8 package

Reduction of overall system costs

RoHS compliant

Halogen free

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