Infineon iPB Type P-Channel MOSFET, 13.8 A, 100 V N, 3-Pin TO-263 IPB19DP10NMATMA1

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Subtotal (1 reel of 1000 units)*

R 11 280,00

(exc. VAT)

R 12 970,00

(inc. VAT)

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  • Shipping from 25 May 2026
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Units
Per unit
Per Reel*
1000 - 1000R 11.28R 11,280.00
2000 - 2000R 10.998R 10,998.00
3000 +R 10.668R 10,668.00

*price indicative

RS stock no.:
235-4844
Mfr. Part No.:
IPB19DP10NMATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

13.8A

Maximum Drain Source Voltage Vds

100V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Channel Mode

N

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS™ P-Channel MOSFETs 100V in D²PAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.

Ideal for high and low switching frequency

Avalanche ruggedness

Industry standard footprint surface mount package

Robust, reliable performance

Increased security of supply

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