ROHM N-Channel MOSFET, 9 A, 650 V Enhancement, 3-Pin TO-252 R6509END3TL1

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Subtotal 50 units (supplied on a continuous strip)*

R 2 561,00

(exc. VAT)

R 2 945,00

(inc. VAT)

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50 - 95R 51.22-
100 - 245R 49.684R 153,60
250 - 995R 47.696R 881,00
1000 +R 45.788R 5 432,00

*price indicative

Packaging Options:
RS stock no.:
235-2690P
Mfr. Part No.:
R6509END3TL1
Manufacturer:
ROHM
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Brand

ROHM

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

585mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

94W

Typical Gate Charge Qg @ Vgs

24nC

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.4mm

Standards/Approvals

No

Height

10.4mm

Width

2.4mm

Automotive Standard

No

The ROHM R6xxxENx series are low-noise products, super Junction MOSFET, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.

Low on-resistance

Fast switching speed

Parallel use is easy

Pb-free plating

RoHS compliant

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