Infineon IST Type N-Channel MOSFET, 475 A, 40 V Enhancement, 5-Pin HSOF IST006N04NM6AUMA1

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Subtotal (1 pack of 2 units)*

R 99,39

(exc. VAT)

R 114,298

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 49.695R 99.39
10 - 98R 48.455R 96.91
100 - 248R 47.00R 94.00
250 - 498R 45.12R 90.24
500 +R 43.315R 86.63

*price indicative

Packaging Options:
RS stock no.:
235-0606
Mfr. Part No.:
IST006N04NM6AUMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

475A

Maximum Drain Source Voltage Vds

40V

Package Type

HSOF

Series

IST

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

0.6mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

250W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

178nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

7.2mm

Length

6.9mm

Width

2.4 mm

Automotive Standard

No

The Infineon OptiMOSTM6 power transistor operated on 40V and drain current of 475A. It is in Stoll package features very low RDS(on) of 0.60mOhm. It has the advantages of Infineon’s well known quality level for robust industry packages making it the Ideal solution for various performance in battery powered applications, battery protection and battery formation.

Optimized for low voltage motor drives application

Optimized for battery power applications

Very low on-resistance RDS(on)

100% avalanche tested

Superior thermal performance

N-channel

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