Infineon IST Type N-Channel MOSFET, 475 A, 40 V Enhancement, 5-Pin HSOF IST006N04NM6AUMA1

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Subtotal (1 pack of 2 units)*

R 77,71

(exc. VAT)

R 89,366

(inc. VAT)

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  • 1,288 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8R 38.855R 77.71
10 - 98R 37.885R 75.77
100 - 248R 36.75R 73.50
250 - 498R 35.28R 70.56
500 +R 33.87R 67.74

*price indicative

Packaging Options:
RS stock no.:
235-0606
Mfr. Part No.:
IST006N04NM6AUMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

475A

Maximum Drain Source Voltage Vds

40V

Series

IST

Package Type

HSOF

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

0.6mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

178nC

Maximum Power Dissipation Pd

250W

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Height

7.2mm

Standards/Approvals

No

Length

6.9mm

Automotive Standard

No

The Infineon OptiMOSTM6 power transistor operated on 40V and drain current of 475A. It is in Stoll package features very low RDS(on) of 0.60mOhm. It has the advantages of Infineon’s well known quality level for robust industry packages making it the Ideal solution for various performance in battery powered applications, battery protection and battery formation.

Optimized for low voltage motor drives application

Optimized for battery power applications

Very low on-resistance RDS(on)

100% avalanche tested

Superior thermal performance

N-channel

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