Renesas Electronics BEAM Type N-Channel MOSFET, 50 A, 30 V Enhancement, 8-Pin WPAK RJK0391DPA-00#J5A
- RS stock no.:
- 234-7153
- Mfr. Part No.:
- RJK0391DPA-00#J5A
- Manufacturer:
- Renesas Electronics
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Bulk discount available
Subtotal (1 pack of 5 units)*
R 144,05
(exc. VAT)
R 165,65
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 2,940 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 28.81 | R 144.05 |
| 50 - 95 | R 28.09 | R 140.45 |
| 100 - 245 | R 27.248 | R 136.24 |
| 250 - 995 | R 26.158 | R 130.79 |
| 1000 + | R 25.112 | R 125.56 |
*price indicative
- RS stock no.:
- 234-7153
- Mfr. Part No.:
- RJK0391DPA-00#J5A
- Manufacturer:
- Renesas Electronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | BEAM | |
| Package Type | WPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0029Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.85mm | |
| Length | 6.1mm | |
| Width | 5.9 mm | |
| Standards/Approvals | Pb-Free, Halogen-Free | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series BEAM | ||
Package Type WPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0029Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.85mm | ||
Length 6.1mm | ||
Width 5.9 mm | ||
Standards/Approvals Pb-Free, Halogen-Free | ||
Automotive Standard No | ||
The Renesas Electronics N-channel single power MOSFET suitable for switching and load switch applications. It has high breakdown voltage of 30 V. It is capable of 4.5 V gate drive.
High speed switching
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
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