STMicroelectronics SCTWA70N120G2V-4 N-Channel MOSFET, 91 A, 1200 V Enhancement, 4-Pin Hip-247
- RS stock no.:
- 233-0475P
- Mfr. Part No.:
- SCTWA70N120G2V-4
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal 5 units (supplied in a tube)*
R 3 294,80
(exc. VAT)
R 3 789,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 358 unit(s) shipping from 14 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 5 - 9 | R 658.96 |
| 10 - 14 | R 639.19 |
| 15 - 19 | R 613.62 |
| 20 + | R 589.08 |
*price indicative
- RS stock no.:
- 233-0475P
- Mfr. Part No.:
- SCTWA70N120G2V-4
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 91A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Series | SCTWA70N120G2V-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Power Dissipation Pd | 547W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2.7V | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | No | |
| Length | 34.8mm | |
| Height | 5mm | |
| Width | 15.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 91A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Series SCTWA70N120G2V-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Power Dissipation Pd 547W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2.7V | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals No | ||
Length 34.8mm | ||
Height 5mm | ||
Width 15.6mm | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability (TJ = 200 °C)
Source sensing pin for increased efficiency