Infineon OptiMOS 5 N-Channel MOSFET, 56 A, 60 V, 8-Pin PQFN ISZ0703NLSATMA1
- RS stock no.:
- 232-6774
- Mfr. Part No.:
- ISZ0703NLSATMA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
R 133,82
(exc. VAT)
R 153,895
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 4,975 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 26.764 | R 133.82 |
| 10 - 95 | R 26.094 | R 130.47 |
| 100 - 245 | R 25.312 | R 126.56 |
| 250 - 495 | R 24.30 | R 121.50 |
| 500 + | R 23.328 | R 116.64 |
*price indicative
- RS stock no.:
- 232-6774
- Mfr. Part No.:
- ISZ0703NLSATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS 5 | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.2mΩ | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Power Dissipation Pd | 44W | |
| Maximum Operating Temperature | 175°C | |
| Height | 3.4mm | |
| Length | 3.4mm | |
| Width | 1.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS 5 | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.2mΩ | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Power Dissipation Pd 44W | ||
Maximum Operating Temperature 175°C | ||
Height 3.4mm | ||
Length 3.4mm | ||
Width 1.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon's OptiMOS PD power MOSFET 60 V, are designed targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.
Logic level availability
Excellent thermal behaviour
100% avalanche tested
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