onsemi NTMC0 2 Type P-Channel MOSFET, 4.5 A, 100 V Enhancement, 8-Pin SOIC NTMC083NP10M5L
- RS stock no.:
- 230-9092
- Mfr. Part No.:
- NTMC083NP10M5L
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 168,94
(exc. VAT)
R 194,28
(inc. VAT)
FREE delivery for orders over R 1,500.00
Limited stock
- 12,310 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 16.894 | R 168.94 |
| 20 - 90 | R 16.472 | R 164.72 |
| 100 - 240 | R 15.978 | R 159.78 |
| 250 - 490 | R 15.339 | R 153.39 |
| 500 + | R 14.725 | R 147.25 |
*price indicative
- RS stock no.:
- 230-9092
- Mfr. Part No.:
- NTMC083NP10M5L
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | NTMC0 | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 83mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 5nC | |
| Maximum Power Dissipation Pd | 3.1W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series NTMC0 | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 83mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 5nC | ||
Maximum Power Dissipation Pd 3.1W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ON Semiconductor dual n-channel and P- channel MOSFET which has drain to source voltage of 100 V. It is typically used synchronous rectification and DC-DC conversion.
Small Footprint (5 x 6 mm) for Compact Design
Low conduction loss
Low RDS(on) to Minimize Conduction Losses
Standard footprint
Low QG and Capacitance to Minimize Driver Losses
The Part is Not ESD Protected
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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