onsemi NTB01 Type N-Channel MOSFET, 75.4 A, 150 V Enhancement, 4-Pin TO-263
- RS stock no.:
- 230-9077
- Mfr. Part No.:
- NTB011N15MC
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 reel of 800 units)*
R 33 219,20
(exc. VAT)
R 38 202,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 6,400 unit(s) shipping from 31 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | R 41.524 | R 33,219.20 |
| 1600 + | R 40.486 | R 32,388.80 |
*price indicative
- RS stock no.:
- 230-9077
- Mfr. Part No.:
- NTB011N15MC
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 75.4A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | NTB01 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 10.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Maximum Power Dissipation Pd | 136.4W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Height | 15.88mm | |
| Standards/Approvals | No | |
| Width | 4.83 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 75.4A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series NTB01 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 10.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Maximum Power Dissipation Pd 136.4W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Height 15.88mm | ||
Standards/Approvals No | ||
Width 4.83 mm | ||
Automotive Standard No | ||
The ON Semiconductor MOSFET - N-channel shielded gate power trench MOSFET which has drain to source voltage of 150 V.
Optimized Switching performance
Max RDS(on) = 10.9 mΩ at VGS = 10 V, ID = 75.4 A
Industry’s Lowest Qrr and softest Body-Diode for superior low noise switching
50% Lower Qrr than other MOSFET Suppliers
High efficiency with lower switching spike and EMI
Lowers Switching Noise/EMI
Improved switching FOM particularly Qgd
100% UIL Tested
No need or less snubber
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